unisonic technologies co., ltd uf630 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2011 unisonic technologies co., ltd qw-r502-049,f 200v, 9a n-channel power mosfet ? description the n-channel enhancement mode silicon gate power mosfet is designed for high vo ltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ? features * r ds(on) = 0.4 ? @ v gs = 10 v * ultra low gate charge ( typical 19 nc ) * low reverse transfer capacitance ( c rss = typical 80 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability ? symbol 1.gate 3.source 2.drain to-251 1 to-220 1 1 to-220f 1 to-220f1 1 to-252 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UF630L-TA3-T uf630g-ta3-t to-220 g d s tube uf630l-tf1-t uf630g-tf1-t to-220f1 g d s tube uf630l-tf3-t uf630g-tf3-t to-220f g d s tube uf630l-tm3-t uf630g-tm3-t to-251 g d s tube uf630l-tn3-r uf630g-tn3-r to-252 g d s tape reel uf630l-tn3-t uf630g-tn3-t to-252 g d s tube note: pin assignment: g: gate d: drain s: source
uf630 power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-049,f ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 200 v drain-gate voltage (r gs = 20k ? , t j =25c ~125c) v dgr 200 v gate - source voltage v gss 20 v continuous drain current i d 9 a pulsed drain current (note 2) i dm 36 a single pulse avalanche energy (note 3) e as 150 mj to-220 75 to-220f1/ to-220f 51 power dissipation to-251/ to-252 p d 54 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l = 4mh, i as = 8.3a, v dd = 20v, r g = 25 ? , starting t j = 25c ? thermal data parameter symbol rating unit to-220/ to-220f1/ to-220f 80 junction to ambient to-251/ to-252 ja 110 c/w to-220 1.67 to-220f1/ to-220f 2.45 junction to case to-251/ to-252 jc 2.3 c/w
uf630 power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-049,f ? electrical specifications (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 200 v on-state drain current (note 1) i d(on) v ds > i d(on) x r ds(on)max , v gs = 10v 9 a drain-source leakage current i dss v ds = rated bv dss , v gs = 0v 10 a forward v gs = 20v, v ds = 0v 100 na gate-source leakage current reverse i gss v gs = -20v, v ds = 0v -100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 2 4 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 5a 0.25 0.4 ? dynamic characteristics input capacitance c iss 600 pf output capacitance c oss 250 pf reverse transfer capacitance c rss v ds = 25v, v gs = 0v, f = 1.0mhz 80 pf switching characteristics turn-on delay time t d(on) 30 ns turn-on rise time t r 50 ns turn-off delay time t d(off) 50 ns turn-off fall time t f v dd = 90v, i d 9a, r gs = 9.1 ? , v gs = 10v, r l = 9.6 ? (note 1, 2) 40 ns total gate charge q g 19 30 nc gate-source charge q gs 10 nc gate-drain charge q gd v gs = 10v, i d = 9a, v ds = 0.8 x rated bv dss i g(ref) = 1.5ma 9 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs =0v, i s = 9.0a 2 v maximum continuous drain-source diode forward current i s 9 a maximum pulsed drain-source diode forward current i sm 36 a reverse recovery time t rr 450 ns reverse recovery charge q rr i s = 9.0a, di s /dt = 100a/ s (note 1) 3 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% notes: 2. essentially independent of operating temperature
uf630 power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-049,f ? test circuits and waveforms v ds l v dd d.u.t. i as 0.01 r g fig1. unclamped energy test circuit fig.2 unclamped energy waveforms 0 t p bv dss i as t av v ds v dd fig.3 switching time test circuit t d(off) t f 90% 50% 50% v gs 0 0 v ds t d(on) 90% t r 10% 10% fig.4 resistive switching waveforms d.u.t. r g v gs r l v dd t on pulse width t off
uf630 power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-049,f ? typical characteristics power dissipation, p d drain current, i d (a) 0.01 rectangular pulse duration, t 1 (s) normalized transient thermal impedance, z jc normalized transient thermal impedance 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 single pulse 0.2 0.1 0.01 0.1 1.0 p dm t1 t2 duty factor, d=t1/t2 peak t j =p dm z jc r jc +t c 0.05 0.02 100 10 0.1 drain to source voltage, v ds (v) drain current, i d (a) forward bias safe operating area 100 10 1 1 1ms 1000 t c =25 t j =max rated 100 s operation in this area may be limited by r ds (on) 100ms dc 10ms 10 s 0.5 drain current, i d (a) drain current, i d (a)
uf630 power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-049,f ? typical characteristics (cont.) drain current, i d (a) drain to source on resistance, r ds (on) normalized drain to source on resistance normalized drain to source breakdown voltage source to drain current, i sd (a) gate to source voltage, v gs (v)
uf630 power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-049,f ? typical characteristics (cont.) capacitance, c (pf) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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